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1/12 february 2005 STP130NS04ZB stb130ns04zb - stw130ns04zb n-channel clamped - 7 m ? - 80a to-220/d2pak/to-247 fully protected mesh overlay? mosfet table 1: general features typical r ds (on) = 7 m ? 100% avalanche tested low capacitance and gate charge 175c maximum junction temperature description this fully clamped mosfet is produced by using the latest advanced company?s mesh overlay process which is based on a novel strip layout. the inherent benefits of the new technology cou- pled with the extra clamping capabilities make this product particularly suitable for the harshest oper- ation conditions such as those encountered in the automotive environment .any other application re- quiring extra ruggedness is also recommended. applications high switching current linear applications table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d STP130NS04ZB stb130ns04zb stw130ns04zb clamped clamped clamped < 9 m ? < 9 m ? < 9 m ? 80 a 80 a 80 a 1 2 3 to-220 d2pak 1 3 1 2 3 to-247 sales type marking package packaging STP130NS04ZB p130ns04zb to-220 tube stb130ns04zbt4 b130ns04zb d 2 pak tape & reel stw130ns04zb w130ns04zb to-247 tube rev. 2
STP130NS04ZB - stb130ns04zb - stw130ns04zb 2/12 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area table 4: thermal data (*)when mounted on 1 inch 2 fr4 2oz cu table 5: avalanche characteristics symbol parameter value unit v ds drain-source voltage (v gs = 0) clamped v v dg drain-gate voltage clamped v v gs gate- source voltage clamped v i d drain current (continuous) at t c = 25 c 80 a i d drain current (continuous) at t c = 100 c 60 a i dg drain gate current (continuous) 50 ma i gs gate source current (continuous) 50 ma i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 300 w derating factor 2.0 w/ c v esd(g-s) gate-source esd(hbm-c=100 pf, r=1.5 k ?) 4kv t j t stg max operating junction temperature storage temperature -55 to 175 c to-220 d2pak to-247 unit rthj-case thermal resistance junction-case max 0.50 c/w rthj-pcb (*) thermal resistance junction-pcb max -- 35 -- c/w rthj-a thermal resistance junction-ambient max 62.5 -- 50 t l maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec) 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 80 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 30 v) 500 mj
3/12 STP130NS04ZB - stb130ns04zb - stw130ns04zb electrical characteristics (t case =25 c unless otherwise specified) table 6: on / off table 7: dynamic table 8: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit v (br)dss clamped voltage i d = 1 ma, v gs = 0 -40 < tj < 175 c 33 v i dss zero gate voltage drain current (v gs = 0) v ds = 16 v,tj = 25 c v ds = 16 v,tj = 125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 10 v,tj = 25 c10a v gss gate-source breakdown voltage i gs = 100 a 18 v v gs(th) gate threshold voltage v ds = v gs = i d = 1 ma 2 4 v r ds(on) static drain-source on resistance v gs = 10 v ,i d = 40 a 7 9 m ? symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds = 15 v, i d = 40 a 50 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1mhz, v gs = 0 2700 1275 285 pf pf pf t d(on) t f t d(off) t f turn-on delay time fall time turn-off delay time fall time v dd = 17.5 v, i d = 40 a, r g = 4.7 ?, v gs = 10 v (see figure 15) 40 220 170 100 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v, i d = 80 a, v gs = 10 v (see figure 17) 80 20 27 105 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 80 320 a a v sd (1) forward on voltage i sd = 80 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100a/s v dd = 25v, t j = 150 c (see figure 16) 90 0.18 4 ns c a
STP130NS04ZB - stb130ns04zb - stw130ns04zb 4/12 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/12 STP130NS04ZB - stb130ns04zb - stw130ns04zb figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: capacitance variations figure 12: normalized on resistance vs tem- perature figure 13: source-drain diode forward char- acteristics figure 14: normalized bvdss vs temperature
STP130NS04ZB - stb130ns04zb - stw130ns04zb 6/12 figure 15: switching times test circuit for resistive load figure 16: test circuit for diode recovery be- haviour figure 17: gate charge test circuit
7/12 STP130NS04ZB - stb130ns04zb - stw130ns04zb dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
STP130NS04ZB - stb130ns04zb - stw130ns04zb 8/12 dim. mm. inch min. typ max. min. typ. max. a 4.32 4.57 0.178 0.180 a1 0.00 0.25 0.00 0.009 b 0.71 0.91 0.028 0.350 b2 1.15 1.40 0.045 0.055 c 0.46 0.61 0.018 0.024 c2 1.22 1.40 0.048 0.055 d 8.89 9.02 9.40 0.350 0.355 0.370 d1 8.01 0.315 e 10.04 10.28 0.395 0.404 e 2.54 0.010 h 13.10 13.70 0.515 0.540 l 1.30 1.70 0.051 0.067 l1 1.15 1.39 0.045 0.054 l2 1.27 1.77 0.050 0.069 l4 2.70 3.10 0.106 0.122 v2 0 8 0 8 to-263 (d 2 pak) mechanical data
9/12 STP130NS04ZB - stb130ns04zb - stw130ns04zb dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ? p 3.55 3.65 0.140 0.143 ? r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
STP130NS04ZB - stb130ns04zb - stw130ns04zb 10/12 tape and reel shipment (suffix ? t4 ? )* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
11/12 STP130NS04ZB - stb130ns04zb - stw130ns04zb table 9: revision history date revision description of changes 10-june-2004 1 first release. 14-jan-2005 2 inserted d 2 pak, complete version.
STP130NS04ZB - stb130ns04zb - stw130ns04zb 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

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